Datasheet 搜索 > ST Microelectronics（意法半导体） > STM32F417IGH6TR 数据手册 > STM32F417IGH6TR 数据手册 140/206 页
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STM32F417IGH6TR 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
封装:
UFBGA
描述:
ARM微控制器 - MCU High-performance foundation line, ARM Cortex-M4 core with DSP and FPU, 1 Mbyte Flash, 168 MHz CPU, ART Accelerator, Ethernet, FSMC, HW crypto
Pictures:
3D模型
符号图
焊盘图
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页面导航:
引脚图在P44P45P46P47P48P49P50P51P52P53P54P55Hot
典型应用电路图在P106P107P140
封装尺寸在P168P169P170P171P172P173P174P175P176P177P178P179
型号编码规则在P189
技术参数、封装参数在P81P116
电气规格在P79P80P81P82P83P84P85P86P87P88P89P90
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STM32F417IGH6TR数据手册
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Electrical characteristics STM32F415xx, STM32F417xx
140/206 DocID022063 Rev 8
Figure 49. ADC accuracy characteristics
1. See also Table 68.
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. E
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 50. Typical connection diagram using the ADC
1. Refer to Table 67 for the values of R
AIN
, R
ADC
and C
ADC
.
2. C
parasitic
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5
pF). A high C
parasitic
value downgrades conversion accuracy. To remedy this,
f
ADC
should be reduced.
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