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STM32F417IGH6TR 数据手册 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
封装:
UFBGA
描述:
ARM微控制器 - MCU High-performance foundation line, ARM Cortex-M4 core with DSP and FPU, 1 Mbyte Flash, 168 MHz CPU, ART Accelerator, Ethernet, FSMC, HW crypto
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STM32F417IGH6TR数据手册
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STM32F415xx, STM32F417xx Electrical characteristics
5.3.23 V
BAT
monitoring characteristics
5.3.24 Embedded reference voltage
The parameters given in Table 72 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 14.
5.3.25 DAC electrical characteristics
Table 71. V
BAT
monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for V
BAT
-50-KΩ
Q Ratio on V
BAT
measurement - 2 -
Er
(1)
Error on Q –1 - +1 %
T
S_vbat
(2)(2)
ADC sampling time when reading the V
BAT
1 mV accuracy
5--µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 72. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ
Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +105 °C 1.18 1.21 1.24 V
T
S_vrefint
(1)
ADC sampling time when reading the
internal reference voltage
-10--µs
V
RERINT_s
(2)
Internal reference voltage spread over the
temperature range
V
DD
= 3 V - 3 5 mV
T
Coeff
(2)
Temperature coefficient - - 30 50 ppm/°C
t
START
(2)
Startup time - - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
Table 73. Internal reference voltage calibration values
Symbol Parameter Memory address
V
REFIN_CAL
Raw data acquired at temperature of 30 °C, V
DDA
=3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B
Table 74. DAC characteristics
Symbol Parameter Min Typ Max Unit Comments
V
DDA
Analog supply voltage 1.8
(1)
-3.6 V
V
REF+
Reference supply voltage 1.8
(1)
-3.6VV
REF+
≤ V
DDA
V
SSA
Ground 0 - 0 V
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