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STPS20L60CG 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
封装:
TO-263
描述:
功率肖特基整流器 POWER SCHOTTKY RECTIFIER
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
封装尺寸在P5P6P7P8
技术参数、封装参数在P10
应用领域在P10
导航目录
STPS20L60CG数据手册
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Characteristics STPS20L60C
2/10 DocID6427 Rev 4
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.42 x I
F(AV)
+ 0.014 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
T
C
= 140 °C
= 0.5
Per diode
Per device
10
20
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 220 A
I
RRM
Repetitive peak reverse current
t
p
= 2 µs square F=1 kHz
1A
P
ARM
Repetitive peak avalanche power
t
p
= 1 µs T
j
= 25 °C
5800 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. thermal runaway condition for a diode on its own heatsink
150 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Total
1.6
0.85
C/W
R
th (c)
Coupling 0.1 C/W
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
350
µA
T
j
= 125 °C 65 95
mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 10 A 0.6
V
T
j
= 125 °C I
F
= 10 A 0.48 0.56
T
j
= 25 °C I
F
= 20A 0.74
T
j
= 125 °C I
F
= 20A 0.62 0.7
dPtot
dTj
---------------
1
Rth j a–
--------------------------
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