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STTH112U 数据手册 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
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TVS二极管
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DO-214AA
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1A 至 3A，STMicroelectronics### 二极管和整流器，STMicroelectronics
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STTH112U数据手册
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Electrical characteristics STTH112
2/8 Doc ID 9343 Rev 5
1 Electrical characteristics
Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
V
(RMS)
Voltage rms 850 V
I
F(AV)
Average forward current
Tl = 85°C δ =0.5 DO-41
1ATl = 115°C δ =0.5 SMA
Tl = 125°C δ =0.5 SMB
I
FSM
Forward surge current t = 8.3 ms
DO-41 20
ASMA
18
SMB
T
stg
Storage temperature range - 50 + 175 °C
T
j
Maximum operating junction temperature + 175 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead
L = 10 mm DO-41 45
°C/W
SMA 30
SMB 25
R
th (j-a)
Junction to ambient L = 10 mm DO-41 110
Table 3. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current V
R
= 1200 V
T
j
= 25 °C 5
µA
T
j
= 125 °C 50
V
F
Forward voltage drop I
F
= 1 A
T
j
= 25 °C 1.9
VT
j
= 125 °C 1.17 1.65
T
j
= 150 °C 1.10 1.55
Table 4. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 0.5 A
I
rr
= 0.25 A I
R
= 1A
T
j
= 25 °C 75 ns
t
fr
Forward recovery time I
F
= 1 A
dI
F
/dt = 50 A/µs
V
FR
= 1.1 x V
Fmax
T
j
= 25 °C
500 ns
V
FP
Forward recovery voltage 30 V
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