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STTH112U 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-214AA
描述:
1A 至 3A，STMicroelectronics### 二极管和整流器，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P5P6
应用领域在P8
电气规格在P2P3P4
导航目录
STTH112U数据手册
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of 8 Go
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STTH112 Electrical characteristics
Doc ID 9343 Rev 5 3/8
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus
forward current
P(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 1
δ = 0.05
δ = 0.5
δ = 0.2
δ = 0.1
I (A)
F(AV)
T
δ
=tp/T
tp
I (A)
FM
0.1
1.0
10.0
100.0
0
.
00
.
5
1.
0
1.
5
2.
0
2.
53
.
03
.
5
4.
0
4.
55
.
0
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-41)
Figure 4. Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
epoxy FR4, L = 10mm
leads
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
T
δ
=tp/T
tp
t (s)
p
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
Figure 5. Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB)
Figure 6. Thermal resistance junction to
ambient versus copper surface
under each lead (DO-41, SMB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
012345678910
S(cm²)
DO-41
L =10mm
leads
SMB
epoxy printed circuit board FR4, copper thickness: 35µm
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