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STTH302 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-201AD
描述:
1A 至 3A，STMicroelectronics### 二极管和整流器，STMicroelectronics
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STTH302数据手册
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1/5
STTH302
®
November 2001 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
DO-201AD
STTH302
■
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
FEATURES AND BENEFITS
The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
F (AV)
Average forward current TI = 107°C δ = 0.5
3A
I
FSM
Surge non repetitive forward current t
p
= 10ms Sinusoidal
130 A
T
stg
Storage temperature range
-65to+175 °C
Tj
Maximum operating junction temperature
175 °C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
200 V
Tj (max) 175 °C
V
F
(max) 0.75 V
trr (max) 35 ns
MAIN PRODUCT CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-a)
Junction-ambient*
25 °C/W
* On infinite heatsink with 10mm lead length.
THERMAL PARAMETERS
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