Datasheet 搜索 > TRIACs > ST Microelectronics（意法半导体） > T1650H-6I 数据手册 > T1650H-6I 数据手册 2/11 页
￥ 7.532
T1650H-6I 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TRIACs
封装:
TO-220-3
描述:
16A 到 20A，STMicroelectronics### 三端双向可控硅开关元件，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P6P7P8P9
技术参数、封装参数在P2P11
应用领域在P1P11
电气规格在P2
导航目录
T1650H-6I数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
Characteristics T1635H, T1650H
2/11 DocID13566 Rev 3
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (full sine wave)
D
2
PAK, TO-220AB T
c
= 130 °C
16 A
TO-220AB Ins T
c
= 113 °C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 160
A
F = 60 Hz t = 16.7 ms 168
I
²
tI
²
t Value for fusing t
p
= 10 ms 169 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 150 °C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 150 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 150 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Value
Unit
T1635H T1650H
I
GT
(1)
V
D
= 12 V, R
L
= 33 Ω
I - II - III MAX. 35 50 mA
V
GT
I - II - III MAX. 1.0 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 k Ω I - II - III MIN. 0.15 V
I
H
(2)
I
T
= 500 mA MAX. 35 75 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
50 90
mA
II 80 110
dV/dt
(2)
VD = 67% VDRM, gate open, Tj = 150 °C MIN. 1000 1500 V/µs
(dI/dt)c
(2)
Without snubber, Tj = 150 °C MIN. 21 28 A/ms
1. minimum I
GT
is guaranteed at 20% of I
GT
max.
2. for both polarities of A2 referenced to A1.
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
