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T1650H-6I 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TRIACs
封装:
TO-220-3
描述:
16A 到 20A，STMicroelectronics### 三端双向可控硅开关元件，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P6P7P8P9
技术参数、封装参数在P2P11
应用领域在P1P11
电气规格在P2
导航目录
T1650H-6I数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
DocID13566 Rev 3 5/11
T1635H, T1650H Characteristics
11
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse
Figure 8. Relative variation of I
GT
,I
H
, I
L
vs
junction temperature(typical values)
100
1000
10000
0.01 0.10 1.00 10.00
I
TSM
(A), I²t (A²s)
Tj initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
t
P
(ms)
width t < 10 ms and corresponding value of I t
p
2
0.0
0.5
1.0
1.5
2.0
2.5
-40 -20 0 20 40 60 80 100 120 140 160
I
GT
,I
H
,I
L
[T
j
]/I
GT
,I
H
,I
L
[T
j
=25°C]
I
GT
I
H
& I
L
T
j
(°C)
Figure 9. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
reapplied (dV/dt)c
Figure 10. Relative variation of critical rate of
decrease of main current versus junction
temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0 100.0
(dI/dt)
c
[(dV/dt)
c
] / Specified (dI/dt)
c
(dV/dt)
C
(V/µs)
typical values
0
1
2
3
4
5
6
7
8
25 50 75 100 125 150
(dI/dt)
c
[T
j
] / (dI/dt)
c
[T
j
=150°C]
T
j
(°C)
Figure 11. Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
Figure 12. Variation of thermal resistance
junction to ambient versus copper surface
under tab
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
50 75 100 125 150
I
DRM
/I
RRM
(µA)
V
DRM
=V
RRM
=400 VV
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 VV
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=200 VV
DRM
=V
RRM
=200 V
T
j
(°C)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
R
th(j-a)
(°C/W)
D²PAK
S
CU
(cm²)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
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