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器件3D模型￥ 15.806
TDE1897RFPT 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
FET驱动器
封装:
SOIC-20
描述:
TDE1897系列 0.5 A 高边驱动器 工业智能电源开关 -DIP8
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P2Hot
原理图在P1
技术参数、封装参数在P2P12
电气规格在P3
导航目录
TDE1897RFPT数据手册
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Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions Input Output Diag1 Diag2
Normal Operation L
H
L
H
H
H
H
H
Open Load Condition (I
o
< I
old
)L
H
L
H
H
L
H
H
Short to V
S
L
H
H
H
L
L
H
H
Short Circuit to Ground (I
O
= I
SC
) (**) TDE1897R
TDE1898R
H <H (*) H L
HH
L
H
H
H
H
Output DMOS Open L
H
L
L
H
L
H
H
Overtemperature L
H
L
L
H
H
L
L
Supply Undervoltage (V
S
< V
sth1
in the falling phase of the sup-
ply voltage; V
S
< V
sth2
in the rising phase of the supply voltage)
L
H
L
L
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
SOURCE DRAIN NDMOS DIODE
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
fsd
2-3 Forward On Voltage @ I
fsd
= 625mA 1 1.5 V
I
fp
2-3 Forward Peak Current t = 10ms; d = 20% 2 A
t
rr
2-3 Reverse Recovery Time I
f
= 625mA di/dt = 25A/µs 200 ns
t
fr
2-3 Forward Recovery Time 50 ns
THERMAL CHARACTERISTICS (*)
Θ Lim Junction Temp. Protect. 135 150 °C
T
H
Thermal Hysteresis 30 °C
SWITCHING CHARACTERISTICS
(V
S
= 24V; R
L
= 48
Ω
) (*)
t
on
Turn on Delay Time 100 µs
t
off
Turn off Delay Time 20 µs
t
d
Input Switching to Diagnostic
Valid
100 µs
Note
Vil
< 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.
TDE1897R - TDE1898R
4/12
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