Datasheet 搜索 > FET驱动器 > ST Microelectronics（意法半导体） > TDE1897RFPT 数据手册 > TDE1897RFPT 数据手册 5/12 页
器件3D模型￥ 15.806
TDE1897RFPT 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
FET驱动器
封装:
SOIC-20
描述:
TDE1897系列 0.5 A 高边驱动器 工业智能电源开关 -DIP8
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TDE1897RFPT数据手册
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APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(V
cl
), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
T
j
= 85
°
C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W
=
V
cl
L
R
L
[
I
o
–
V
cl
– V
s
R
L
log
1
+
V
s
V
cl
– V
s
]
Where:
V
cl
= clamp voltage;
L = inductive load;
R
L
= resistive load;
Vs = supply voltage;
I
O
= I
LOAD
3) In normal conditions the operating Junction
temperature should remain below 125
°
C.
Figure 2:
Inductive Load Equivalent Circuit
Figure 3:
Demagnetization Cycle Waveforms
-25 0 25 50 75 100 125 Tj (˚C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
α
D93IN018
α=
RDSON (Tj)
RDSON (Tj=25˚C)
Figure 4:
Normalized R
DSON
vs. Junction
Temperature
TDE1897R - TDE1898R
5/12
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