Datasheet 搜索 > 光耦合器/光隔离器 > Toshiba（东芝） > TLP291(GB-TP,SE 数据手册 > TLP291(GB-TP,SE 数据手册 1/10 页
器件3D模型￥ 0.588
TLP291(GB-TP,SE 数据手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
光耦合器/光隔离器
封装:
SOIC-4
描述:
晶体管输出光电耦合器 50mA 80V Gen Purp 50mA 1 Circuit
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TLP291(GB-TP,SE数据手册
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TLP291(SE
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291(SE
Power Supplies
Unit: mm
Programmable Controllers
TOSHIBA 11-3C1
Weight: 0.05 g (typ.)
Hybrid ICs
TLP291(SE consists of photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
TLP291(SE is housed in the SO4 package, very small and thin coupler.
Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to
110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage : 80 V (min)
Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
Isolatio
n Voltage : 3750 Vrms (min)
Operation temperature: -55 to 110 ˚C
Pin Configuration
UL reco
gnized : UL1577, File No. E67349
cUL approved : CSA Component Acceptance Service No.5A,
File No. E67349
SEMKO conformity : EN 60065: 2002,
EN 60950-1: 2001, EN 60335-1: 2002,
T
L
P291
1
2
4
3
BSI
conformit
y : BS EN 60065: 2002,
BS EN 60950-1: 2006
VDE conformity: EN 60747-5-5
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Constructi
on Mechanical Rating
Creepage distance: 5.0mm(min)
Clearance: 5.0mm(min)
Insulation thickness: 0.4mm(min)
2013-05-27
1
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