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TLP291(GR-TP,SE(T 数据手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
光耦合器/光隔离器
封装:
SO-4
描述:
TLP291(GR-TP,SE(T 编带
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TLP291(GR-TP,SE(T数据手册
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TLP291
2014-09-22
1
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage : 80 V (min)
Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
Isolation Voltage : 3750 Vrms (min)
Operation temperature : -55 to 110 ˚C
UL recognized : UL1577, File No. E67349
cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
SEMKO approved: EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance: 5.0 mm (min)
Clearance: 5.0 mm (min)
Insulation thickness: 0.4 mm (min)
TOSHIBA 11-3C1
Weight: 0.05 g (typ.)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
1
2
4
3
TLP291
Pin Configuration
Unit: mm
Start of commercial production
2012
/
02
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