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器件3D模型￥ 38.441
TRSF3223ECPWR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
接口芯片
封装:
TSSOP-20
描述:
3V至5.5V多通道RS - 232线路驱动器/接收器，具有± 15 kV ESD保护 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION
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典型应用电路图在P3
封装尺寸在P2P13P15P16P25
焊盘布局在P26
型号编码规则在P1P2
标记信息在P2P13P14
封装信息在P2P13P14P15P16
技术参数、封装参数在P4
应用领域在P1P29
电气规格在P4P5P6P7
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TRSF3223ECPWR数据手册
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of 29 Go
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TRSF3223E
www.ti.com
SLLS824A –AUGUST 2007–REVISED SEPTEMBER 2011
DRIVER SECTION
Electrical Characteristics
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
V
OH
High-level output voltage DOUT at R
L
= 3 kΩ to GND 5 5.4 V
V
OL
Low-level output voltage DOUT at R
L
= 3 kΩ to GND –5 –5.4 V
I
IH
High-level input current V
I
= V
CC
±0.01 ±1 μA
I
IL
Low-level input current V
I
at GND ±0.01 ±1 μA
V
CC
= 3.6 V, V
O
= 0 V
I
OS
Short-circuit output current
(3)
±35 ±60 mA
V
CC
= 5.5 V, V
O
= 0 V
r
o
Output resistance V
CC
, V+, and V– = 0 V, V
O
= ±2 V 300 10M Ω
FORCEOFF = GND, V
CC
= 3 V to 3.6 V, V
O
= ±12 V ±25
I
OZ
Output leakage current μA
FORCEOFF = GND, V
CC
= 4.5 V to 5.5 V, V
O
= ±12 V ±25
(1) Test conditions are C1–C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
(3) Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one
output should be shorted at a time.
Switching Characteristics
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5)
PARAMETER TEST CONDITIONS MIN TYP
(2)
MAX UNIT
C
L
= 1000 pF 250
Maximum
R
L
= 3 kΩ,
data rate C
L
= 250 pF, V
CC
= 3 V to 4.5 V 1000 kbit/s
One DOUT switching
(see Figure 1)
C
L
= 1000 pF, V
CC
= 4.5 V to 5.5 V 1000
t
sk(p)
Pulse skew
(3)
C
L
= 150 pF to 2500 pF, R
L
= 3 kΩ to 7 kΩ, See Figure 2 300 ns
R
L
= 7 kΩ, C
L
= 150 pF to 1000 pF 8 90
Slew rate,
SR(tr) transition region C
L
= 1000 pF 12 60 V/μs
R
L
= 3 kΩ
(see Figure 1)
C
L
= 150 pF to 250 pF 24 150
(1) Test conditions are C1–C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
(3) Pulse skew is defined as |t
PLH
– t
PHL
| of each channel of the same device.
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