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UCC27321DGNG4 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
FET驱动器
封装:
PowerPad-MSOP-8
描述:
单9A高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P15
原理图在P1P12
封装尺寸在P23P24P25P27P28
焊盘布局在P20
标记信息在P23P24P25
封装信息在P6P22P23P24P25P26P27P28
技术参数、封装参数在P4
应用领域在P1P26P35
电气规格在P5P16P17
导航目录
UCC27321DGNG4数据手册
Page:
of 35 Go
若手册格式错乱，请下载阅览PDF原文件
UCC27321, UCC27322
UCC37321, UCC37322
SLUS504H –SEPTEMBER 2002–REVISED JANUARY 2016
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)(2)
MIN MAX UNIT
Supply voltage, V
DD
–0.3 16 V
Output current (OUT) DC, I
OUT_DC
0.6 A
Input voltage (IN), V
IN
–0.3 6 V or V
DD
+ 0.3
(3)
V
Enable voltage (ENBL) –0.3 6 V or V
DD
+ 0.3
(3)
V
D package 650 mW
Power dissipation at T
A
= 25°C DGN package 3 W
P package 350 mW
Lead temperature (soldering, 10 s) 300 °C
Junction operating temperature, T
J
–55 150 °C
Storage temperature, T
stg
–65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating ConditionsRecommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
(3) Whichever is larger
7.2 ESD Ratings
VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2500
V
(ESD)
Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-
±1500
C101
(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, VDD 4.5 15 V
7.4 Thermal Information
UCC27322 UCC27321
DGN (MSOP-
THERMAL METRIC
(1)
D (SOIC) P (PDIP) UNIT
PowerPAD)
8 PINS 8 PINS 8 PINS
R
θJA
Junction-to-ambient thermal resistance 56.6 55.9 56.7 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 52.8 45.3 52.9 °C/W
R
θJB
Junction-to-board thermal resistance 32.6 32.6 32.7 °C/W
ψ
JT
Junction-to-top characterization parameter 1.8 23.0 1.8 °C/W
ψ
JB
Junction-to-board characterization parameter 32.3 32.5 32.4 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 5.9 — 5.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated
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