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6
5
4
1
2
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200 kW
VDD
230 kW
UVLO
VDD
VDD
VDD
OUTH
OUTL
IN+
IN-
GND
UCC27511
,
UCC27512
www.ti.com
SLUSAW9F FEBRUARY 2012REVISED NOVEMBER 2014
9 Detailed Description
9.1 Overview
The UCC27511/2 single-channel high-speed low-side gate-driver device is capable of effectively driving
MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the
UCC27511 device is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-
to-rail drive capability and extremely small propagation delay of 13 ns (typical).
The UCC27511 device provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong
sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511
device also features a unique split output configuration where the gate-drive current is sourced through the
OUTH pin and sunk through the OUTL pin. This unique pin arrangement allows the user to apply independent
turnon and turnoff resistors to the OUTH and OUTL pins (respectively) and easily control the switching slew
rates.
Alternatively the OUTH and OUTL pins can be tied together, which results in a typical gate driver output
configuration where the source and sink currents are delivered from the same pin. In case of UCC27511 device,
the state of the device's output is simply determined by the combined states of the OUTH and OUTL pins when
tied together. Output high implies that OUTH pin is pulled close to V
DD
pin bias voltage while OUTL pin is in high-
impedance state. Similarly output low implies that OUTL pin is pulled close to the GND pin while OUTH pin is in
high-impedance state. OUTH pulled to VDD, while OUTL pulled to GND pin simultaneously is not a valid state for
the device.
The UCC27511 device is designed to operate over a wide V
DD
range of 4.5 to 18 V and wide temperature range
of –40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on the V
DD
pin holds the output low outside
V
DD
operating range. The capability to operate at low voltage levels, such as below 5 V, along with best-in-class
switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such
as GaN power-semiconductor devices.
The UCC27511 device features a dual-input design which offers flexibility of implementing both inverting (IN–
pin) and noninverting (IN+ pin) configuration with the same device. Either the IN+ or IN– pin can be used to
control the state of the driver output. The unused input pin can be used for enable and disable functions. For
system robustness, internal pullup and pulldown resistors on the input pins ensure that outputs are held low
when the input pins are in floating condition. Therefore the unused input pin is not left floating and must be
properly biased to ensure that driver output is in enabled for normal operation.
The input pin threshold of the UCC27511A-Q1 device is based on TTL and CMOS-compatible low-voltage logic
which is fixed and independent of the V
DD
supply voltage. Wide hysteresis between the high and low thresholds
offers excellent noise immunity.
9.2 Functional Block Diagram
Figure 19. UCC27511 Functional Block Diagram
Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: UCC27511 UCC27512

UCC27511DBVR 数据手册

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UCC27511 数据手册

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