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UPS120EE3/TR13 数据手册 - Microsemi（美高森美）
制造商:
Microsemi（美高森美）
分类:
TVS二极管
封装:
DO-216AA
描述:
•薄型 - 最大高度为1.1毫米•占地面积小•低VF提供更高的效率和延长电池寿命•提供12毫米 和卷轴每卷 - 12,000单位•低热阻裸露的直接散热路径模具
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UPS120EE3/TR13数据手册
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of 4 Go
若手册格式错乱，请下载阅览PDF原文件
Low Leakage Schottky Barrier Rectifier
www.Microsemi.com
2/4
Copyright © 2008
June 2008 Rev E
UPS120Ee3
Characteristics
Static Electrical Characteristics
Symbol Parameter Test Conditions Typ max Units
I
F
= 0.1 A 0.455
I
F
= 1.0 A 0.530
T
J
= 25ºC
I
F
= 3.0 A 0.595
I
F
= 0.1 A 0.360
I
F
= 1.0 A 0.455
V
F
(2)
Maximum forward voltage
T
J
= 100ºC
I
F
= 3.0 A 0.540
V
V
R
= 20V 10
V
R
= 10V 1.0
T
J
= 25ºC
V
R
= 5V 0.5
V
R
= 20V 1600
V
R
= 10V 500
I
R
(2)
Maximum instantaneous
reverse current
T
J
= 100ºC
V
R
= 5V 300
µA
C
T
Junction capacitance V
R
= 5V, f = 1MHz pF
(2)
Measured with a test pulse of 380µs to minimize self-heating effect
Thermal Characteristics
Symbol Parameter Value Unit
R
ΘJC
Junction to case (bottom) 15 ºC/W
R
ΘJA
Junction to ambient
(3)
240 ºC/W
(3)
Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this device under any
reverse voltage conditions. Calculations of T
J
therefore must
include forward and reverse power effects. The allowable
operating T
J
may be calculated from the equation:
T
J
= T
J max
= r(t)(Pf+Pr) where
r(t) = thermal impedance under given conditions.
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the de-rated allowable T
J
due to reverse bias
under DC conditions only and is calculated as T
J
= T
J max
-r(t) Pr,
Where r(t)=Rthja. For other power applications further
calculations must be performed.
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