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UPS120EE3/TR7 数据手册 - Microchip（微芯）
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Microchip（微芯）
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UPS120EE3/TR7数据手册
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Low Leakage Schottky Barrier Rectifier
www.Microsemi.com
1/4
Copyright © 2008
June 2008 Rev E
UPS120Ee3
Main product characteristics
Features and benefits
• Low forward voltage drop
• Low profile package height
• Efficient heat path with integral locking bottom metal tab
• Low thermal resistance DO-216AA package
Description and applications
Single schottky rectifier assembled in Powermite 1
®
package which features a full metallic bottom that
eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique
locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with
very low thermal resistance junction to case (bottom).
This product is suitable for use in switching and regulating power supplies and also charge pump
circuits.
Absolute maximum ratings
(1)
Symbol Parameter Value Unit
V
RRM
V
RWM
V
R
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20 V
V
R(RMS)
RMS Reverse Voltage 14 V
I
O
Average rectified forward output current
(T
C
= 135ºC)
1.0 A
I
FRM
Peak repetitive forward current
(100kHz square wave, T
C
= 135ºC)
2.0 A
I
FSM
Non repetitive peak forward surge current
(8.3ms single half sine wave)
50 A
dV/dt Voltage rate of change (at max V
R
) 10000 V/µs
T
STG
Storage temperature -55 to +150 ºC
T
J
Junction temperature -55 to +125 ºC
(1)
All ratings at 25ºC unless specified otherwise
I
O
1A
V
RRM
20V
T
j(MAX)
125ºC
V
F(MAX)
0.455V
I
R(MAX)
10µA
Powermite 1
(DO-216AA)
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