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Z0103MN,135 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
TRIACs
封装:
TO-261-4
描述:
NXP Z0103MN,135. 双向晶闸管, 600V, 1A
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Z0103MN,135数据手册
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Characteristics Z01
2/12 Doc ID 7474 Rev 10
1 Characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current
(full sine wave)
SOT-223 T
tab
= 90 °C
1ATO-92 T
L
= 50 °C
SMBflat-3L T
tab
= 107 °C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 8
A
F = 60 Hz t = 16.7 ms 8.5
I
²
tI
²
t Value for fusing t
p
= 10 ms 0.35 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 20 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 2. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Z01
Unit
03 07 09 10
I
GT
(1)
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
V
D
= 12 V,
R
L
= 30 Ω
I - II - III
MAX.
3 5 10 25
mA
IV 5 7 10 25
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
,
R
L
= 3.3 kΩ,
T
j
= 125 °C
ALL MIN. 0.2 V
I
H
(2) I
T
= 50 mA MAX. 7 10 10 25 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
7101525
mA
II 15 20 25 50
dV/dt
(2)
V
D
= 67% V
DRM
gate open
T
j
= 110 °C
MIN. 10 20 50 100 V/µs
(dV/dt)
c
(2)
2. For both polarities of A2 referenced to A1.
(dI/dt)
c
= 0.44 A/ms,
T
j
= 110 °C
MIN. 0.5 1 2 5 V/µs
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