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Z0103MN,135 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
TRIACs
封装:
TO-261-4
描述:
NXP Z0103MN,135. 双向晶闸管, 600V, 1A
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Z0103MN,135数据手册
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Characteristics Z01
4/12 Doc ID 7474 Rev 10
Figure 3. On-state rms current versus
ambient temperature (free air
convection full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
(Z
th(j-a)
)
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
R = 60°C/W
(SOT-223)
th(j-a)
R = 150°C/W
(TO-92)
th(j-a)
T (°C)
amb
R
th (j-a)
= 100°C/W
(SMBflat-3L)
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z01xxMUF
Copper surface area
= 5cm²
Z01xxA
Z01xxN
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
Figure 5. Relative variation of holding
current and latching current versus
junction temperature (typ. values)
Figure 6. Relative variation of gate trigger
current (I
GT
) and voltage (V
GT
)
versus junction temperature
I,I [T]
/
HL j
I , I [T =25°
C
]
HL j
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
I
L
T (°C)
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
T
j
(°C)
I
GT
,V
GT
[T
j
]/I
GT
,V
GT
[T
j
=25 °C]
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3-Q4
I
GT
Q3
I
GT
Q4
Figure 7. Surge peak on-state current versus
number of cycles
Figure 8. Non-repetitive surge peak
on-state current and corresponding
value of I
2
t sinusoidal pulse width
0
1
2
3
4
5
6
7
8
9
1 10 100 1000
Number of cycles
Repetitive
T = 95 °C
amb
Non repetitive
T initial = 25 °C
j
I (A)
TSM
One cycle
T = 20 ms
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
t (ms)
p
I (A), I t (A s)
TSM
22
It
2
dI/dt limitation:
20A/µs
T initial = 25°C
j
I
TSM
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