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2N7002/702 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
封装:
SOT-23
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2N7002/702数据手册
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Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 4
1 Publication Order Number:
2N7002LT1/D
2N7002LT1
Preferred Device
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
I
D
I
D
I
DM
±115
±75
±800
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to
+150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device Package Shipping
ORDERING INFORMATION
2N7002LT1 SOT–23 3000 Tape & Reel
N–Channel
SOT–23
CASE 318
STYLE 21
http://onsemi.com
W
702
702 = Device Code
W = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
2N7002LT3 SOT–23 10,000 Tape & Reel
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
Preferred devices are recommended choices for future use
and best overall value.
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