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2N7002/702 其他数据使用手册 - Fairchild（飞兆/仙童）
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Fairchild（飞兆/仙童）
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SOT-23
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2N7002/702数据手册
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2N7002LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10 µAdc)
V
(BR)DSS
60 – – Vdc
Zero Gate Voltage Drain Current T
J
= 25°C
(V
GS
= 0, V
DS
= 60 Vdc) T
J
= 125°C
I
DSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
– – 100 nAdc
Gate–Body Leakage Current, Reverse
(V
GS
= –20 Vdc)
I
GSSR
– – –100 nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 µAdc)
V
GS(th)
1.0 – 2.5 Vdc
On–State Drain Current
(V
DS
≥ 2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500 – – mA
Static Drain–Source On–State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
–
–
–
–
3.75
0.375
Vdc
Static Drain–Source On–State Resistance
(V
GS
= 10 V, I
D
= 500 mAdc) T
C
= 25°C
T
C
= 125°C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc) T
C
= 25°C
T
C
= 125°C
r
DS(on)
–
–
–
–
–
–
–
–
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
≥ 2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
– – 50 pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
– – 25 pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
– – 5.0 pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(V
DD
= 25 Vdc, I
D
500 mAdc,
t
d(on)
– – 20 ns
Turn–Off Delay Time
(V
DD
25
Vdc
,
I
D
500
mAdc
,
R
G
= 25 Ω, R
L
= 50 Ω, V
gen
= 10 V)
t
d(off)
– – 40 ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
– – –1.5 Vdc
Source Current Continuous
(Body Diode)
I
S
– – –115 mAdc
Source Current Pulsed I
SM
– – –800 mAdc
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
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