Datasheet 搜索 > MOS管 > Alpha & Omega Semiconductor（万代半导体） > AOTF4N90 数据手册 > AOTF4N90 其他数据使用手册 1/6 页
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AOTF4N90 其他数据使用手册 - Alpha & Omega Semiconductor（万代半导体）
制造商:
Alpha & Omega Semiconductor（万代半导体）
分类:
MOS管
封装:
TO-220-3
描述:
二极管与整流器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
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技术参数、封装参数在P1
应用领域在P2
电气规格在P2
导航目录
AOTF4N90数据手册
Page:
of 6 Go
若手册格式错乱，请下载阅览PDF原文件
AOT4N60/AOTF4N60
600V,4A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 4A
R
DS(ON)
(at V
GS
=10V) < 2.2Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT4N60L & AOTF4N60L
Symbol
V
DS
The AOT4N60 & AOTF4N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
700V@150℃
Drain-Source Voltage 600
AOT4N60 AOTF4N60
Top View
TO-220F
TO-220
G
D
S
G
D
S
G
D
S
AOT4N60
AOTF4N60
V
GS
I
DM
I
AR
E
AR
E
AS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
dv/dt
50
V/ns
Maximum Case-to-sink
A
Maximum Junction-to-Case
°C/W
°C/W
Derate above 25
o
C
Parameter
0.83 0.28
W/
o
C
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
P
D
T
C
=25°C
Thermal Characteristics
300
T
C
=100°C
A
2.5
Repetitive avalanche energy
C
V±30Gate-Source Voltage
16Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C
I
D
4 4*
2.7
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
°C
°C
W
2.7*
mJ
5
A
mJ
-55 to 150
104 35
Avalanche Current
C
94
Single plused avalanche energy
G
188
1.2
--
Units
°C/W65
0.5
65
3.6
AOT4N60 AOTF4N60
Rev.10.0: October 2013
www.aosmd.com Page 1 of 6
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