Datasheet 搜索 > 中高压MOS管 > Fairchild（飞兆/仙童） > FCPF400N80Z 数据手册 > FCPF400N80Z 产品修订记录 1/7 页
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FCPF400N80Z 产品修订记录 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
中高压MOS管
封装:
TO-220F-3
描述:
FAIRCHILD SEMICONDUCTOR FCPF400N80Z 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V
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引脚图
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技术参数、封装参数在P1
导航目录
FCPF400N80Z数据手册
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PCN# : P59BAAB
Issue Date : Sep. 10, 2015
Information Only Notification
This is to inform you that a change is being made to the following products.
This is a minor change that has no impact on product quality, reliability, electrical or mechanical performance. Affected
products will remain fully compliant to all published specifications. Notification is being made for informational purposes
only and there is no approval required. Products incorporating this change may be shipped interchangeably with
existing unchanged products on or after the issue date of this notification.
Please contact your local Customer Quality Engineer if you have any questions regarding this notification.
Implementation of change:
Description of Change (From) :
1) Sub Title: 800 V, 11 A, 400 m (page 1)
2) Absolute Maximum Ratings, Note - *Drain current limited by maximum junction temperature (page 1)
3) Absolute Maximum Ratings, I , Drain Current (Continuous T =25 C) = 11 A (page 1)
D C
o
4) Absolute Maximum Ratings, I , Drain Current (Continuous T =100 C) = 6.9 A (page 1)
D C
o
5) Drain-Source Diode Characteristics, I = 11 A (page 2)
S
6) Current Figure 9, Maximum Safe Operating Area (page 4)
7) Current Figure 10, Maximum Drain Current vs Case Temperature (page 4)
Description of Change (To) :
1) Sub Title: 800 V, 14 A, 400 m (page 1)
2) Absolute Maximum Ratings, Note - *Drain current limited by maximum junction temperature, with heatsink. (page 1)
3) Absolute Maximum Ratings, I , Drain Current (Continuous T =25 C) = 14 A (page 1)
D C
o
4) Absolute Maximum Ratings, I , Drain Current (Continuous T =100 C) = 8.9 A (page 1)
D C
o
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