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FDC658AP数据手册
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FDC658AP 数据手册

ON Semiconductor(安森美)
5 页 / 0.21 MByte
ON Semiconductor(安森美)
7 页 / 0.33 MByte
ON Semiconductor(安森美)
15 页 / 0.57 MByte

FDC658 数据手册

Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FDC658P  晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FDC658AP  晶体管, MOSFET, P沟道, 4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
ON Semiconductor(安森美)
FDC658P 系列 30 V 50 mOhm 单 P 沟道 逻辑电平 PowerTrench Mosfet SSOT-6
ON Semiconductor(安森美)
PowerTrench® P 通道 MOSFET,Fairchild SemiconductorPowerTrench® MOSFET 是优化的电源开关,可提高系统效率和功率密度。 它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管,有助于快速切换交流/直流电源中的同步整流。 最新的 PowerTrench® MOSFET 采用屏蔽栅极结构,可提供电荷平衡。 利用这一先进技术,这些设备的 FOM(品质因素)显著低于之前的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。### MOSFET 晶体管,Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸,其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
Fairchild(飞兆/仙童)
Freescale(飞思卡尔)
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