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FDN304P 产品手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOT-23-3
描述:
FAIRCHILD SEMICONDUCTOR FDN304P 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
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FDN304P数据手册
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June 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDN304P Rev B(W)
FDN304P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –2.4 A, –20 V. R
DS(ON)
= 0.052 Ω @ V
GS
= –4.5 V
R
DS(ON)
= 0.070 Ω @ V
GS
= –2.5 V
R
DS(ON)
= 0.100 Ω @ V
GS
= –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a)
–2.4
A
– Pulsed
–10
Maximum Power Dissipation (Note 1a) 0.5P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.304 FDN304P 7’’ 8mm 3000 units
FDN304P
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