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FDS6930B
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FDS6930B数据手册
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TEM001796 Rev. A Page 1 of 2
Product Bulletin
Document # : PB22531X
Issue Date: 20December2018
TitleofChange: PackingChangeforSOIC8MSL1products.
Effectivedate: 20December2018
Contactinformation: ContactyourlocalONSemiconductorSalesOfficeor<Erik.Comparini@onsemi.com>
Typeofnotification: ThisProductBulletinisfornotificationpurposesonly.ONSemiconductorwillproceedwithimplementation
ofthischangeuponpublicationofthisProductBulletin.
ChangeCategory:
WaferFab

AssemblyCh a n ge
TestCh a n ge Other
__Packing___
ChangeSubCategory(s):
Ma nufacturi ngSite Addition
Ma nu fa cturi ngSiteTransfer
Ma nu fa cturi ngProce s s Ch a n ge
Ma teri a l Cha nge
Productspecificchange
Da ta s heet/ProductDocchange
Shippi ng/Pa cka gi ng/Ma rki ng
Other:
___________________
SitesAffected:
ONSemiconductorSites:
ONCarmona,Philippines
ONTarlacCity,Philippines
ExternalFoundry/SubconSites:
ASEKunshan
GEM
Greatek
Stars
Hana
DescriptionandPurpose:
SOIC8MSL1productswillbepackedtworeelsperintermediateboxinordertooptimizedimensionalshippingweightandreducewaste.There
isnochangetotheform,fitorfunctionoftheproduct.Thereisnochangeinboxsizeorboxspecification.Customersmaycontinuetoorder
single
reel increments with no change In box size or packing. If customers order in multiples of two reels, the reels will be packed two reels per
intermediatebox.
ListofAffectedParts:
NSS40300DDR2G FDS8817NZ FDS6673BZ
NSS40300MDR2G FDS8858CZ MC100LVEL11DR2G MC10ELT25DR2G
NSS40301MDR2G FDS8870 MC100LVEL16DR2G NTMD6N02R2G
NSS40302PDR2G FDS8876 FDS6930B MC10EP08DR2G
FDFS2P753Z FDS8882 FDS8880 MC10EP11DR2G
FDFS6N548 FDS8896 FDS9431A MC10EP32DR2G
FDFS6N754 FDS8928A FDS9926A NTMS4177PR2G
FDS4410A FDS8958A NDS8425 MC10EP33DR2G
FDS4435A FDS8958B SI4532DY MC10EP51DR2G
FDS4465 FDS8960C MC100EL01DR2G MC10LVEP11DR2G
FDS4501H FDS8978 MC100EL07DR2G MC12026ADR2G
FDS4935A FDS8978F40 MC100EL11DR2G MC12080DR2G
FDS4935BZ FDS9400A MC100EL16DR2G
MC12093DR2G
FDS6294 FDS9435ANBAD008 MC100EL32DR2G MCK12140DR2G
FDS6298 FDS9934C MC100EL58DR2G NB100ELT23LDR2G
FDS6375 FDS9953A MC100ELT22DR2G NB2304AI1DR2G
FDS6570A NDS8434 MC100ELT24DR2G NB2305AI1DR2G

FDS6930B 数据手册

ON Semiconductor(安森美)
5 页 / 0.19 MByte
ON Semiconductor(安森美)
8 页 / 0.84 MByte
ON Semiconductor(安森美)
5 页 / 0.58 MByte

FDS6930 数据手册

Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FDS6930B.  场效应管, MOSFET, N沟道, 30V
ON Semiconductor(安森美)
FDS6930B 系列 30 V 38 mOhm 双 N 沟道 逻辑电平 PowerTrench Mosfet - SOIC-8
Fairchild(飞兆/仙童)
FAIRCHILD SEMICONDUCTOR  FDS6930A  双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
ON Semiconductor(安森美)
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
Freescale(飞思卡尔)
Fairchild(飞兆/仙童)
双N沟道逻辑电平MOSFET PowerTrench® Dual N-Channel Logic Level PowerTrench® MOSFET
Freescale(飞思卡尔)
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