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FQT1N60CTF-WS 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
封装:
TO-261-4
描述:
FQT1N60CTF-WS 编带
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FQT1N60CTF-WS数据手册
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FQT1N60C N-Channel MOSFET
©2007 Semiconductor Components Industries, LLC.
July-2018,Rev. 4
Publication Order Number:
FQT1N60C/D
D
G
S
SOT-223
G
D
S
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol Parameter FQT1N60C
Unit
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
D r a i n C u r r e n t
-Continuous (T
C
= 25
o
C) 0.2
A
-Continuous (T
C
= 100
o
C) 0.12
I
DM
D r a i n C u r r e n t - P u l s e d (Note 1) 0.8 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 33 mJ
I
AR
Avalanche Current (Note 1) 0.2 A
E
AR
Repetitive Avalanche Energy (Note 1) 0.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
A
= 25
o
C)
2.1 W
- Derate above 25
o
C0.02W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
Min. Max.
Unit
R
θJA
Thermal Resistance, Junction to Ambient* - 60
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Features
•
0.2 A, 600 V, R
DS(on)
=9.3 Ω(
7\S.)@V
GS
=10 V, I
D
=0.1 A
• Low Gate Charge (Typ. nC)
•
Low C
rss
(Typ. pF)
•
100% Avalanche Tested
FQT1N60C
N-Channel QFET
®
MOSFET
600V, 0.2 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-
state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
•
RoHS Compliant
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