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IRF5210STRLPBF
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IRF5210STRLPBF数据手册
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Dear Customer,
Please find attached our INFINEON Technologies PCN:
Power Management Devices – D2Pak Power MOSFET Bill of Materials change
Important information for your attention:
Please respond to this PCN by indicating your decision on the approval form, sign it and return to your sales partner before
22 Feb, 2016.
Infineon aligns with the widely-recognized JEDEC STANDARD “JESD46“, which stipulates:
“Lack of acknowledgment of the PCN within 30 days constitutes acceptance of the change.”
Your prompt reply will help Infineon Technologies to assure a smooth and well executed transition. If Infineon does not hear from your side by the
due date, we will assume your full acceptance to this proposed change and its implementation.
Your attention and response to this matter is greatly appreciated.
Infineon Technologies AG
Chairman of the Supervisory Board: Wolfgang Mayrhuber
Management Board: Dr. Reinhard Ploss (CEO), Dominik Asam, Arunjai Mittal
Registered Office: Neubiberg
Commercial Register: München HRB 126492
On January 13, 2015, Infineon Technologies acquired International
Rectifier. The organization and business of former International
Rectifier have been integrated into Infineon. That means that
customer facing IT tools and processes like PCN, Information Note
and Product Discontinuation are being merged consolidated.
For further details please visit our website:
http://www.infineon.com/powerfulcombination
Process / Product
Change Notification
N° 550-PCN90-Public
Page 1

IRF5210STRLPBF 数据手册

Infineon(英飞凌)
10 页 / 0.3 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
27 页 / 0.3 MByte
Infineon(英飞凌)
2 页 / 0.17 MByte
Infineon(英飞凌)
37 页 / 2.01 MByte
Infineon(英飞凌)
5 页 / 0.32 MByte
Infineon(英飞凌)
9 页 / 0.14 MByte

IRF5210 数据手册

International Rectifier(国际整流器)
Infineon(英飞凌)
TT Electronics Resistors
New Jersey Semiconductor
IRF
功率MOSFET ( VDSS = -100V , RDS(ON) = 0.06ohm ,ID = -40A ) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Infineon(英飞凌)
P 通道功率 MOSFET 超过 8A,InfineonInfineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
Infineon(英飞凌)
INFINEON  IRF5210STRLPBF  场效应管, MOSFET, P沟道, -100V, 40A D2-PAK, 整卷
International Rectifier(国际整流器)
P 通道功率 MOSFET 超过 8A,Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 MOSFET 晶体管,Infineon (IR) MOSFET 晶体管,Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
International Rectifier(国际整流器)
P沟道,-100V,-38A,60mΩ@10V
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