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IRF840B
1.903
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  • 封装尺寸在P8P9
  • 标记信息在P8P9
  • 技术参数、封装参数在P1P11
  • 应用领域在P1
IRF840B数据手册
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04/21/04
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
V
DSS
R
DS(on)
max I
D
500V 0.85 8.0A
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 8.0
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 5.1 A
I
DM
Pulsed Drain Current  32
P
D
@T
C
= 25°C Power Dissipation 125 W
P
D
@T
A
= 25°C Power Dissipation 3.1
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes through are on page 10
Typical SMPS Topologies
l Two Transistor Forward
l Haft Bridge
l Full Bridge
IRF840ASPbF
IRF840ALPbF
D
2
Pak
IRF840AS
TO-262
IRF840AL
PD- 95143
Document Number: 91066
www.vishay.com
1

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