Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRFB3207PBF 数据手册 > IRFB3207PBF 产品修订记录 1/5 页
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IRFB3207PBF 产品修订记录 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220-3
描述:
N沟道 75 V 300 W 180 nC 功率Mosfet 法兰安装 - TO-220AB
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
功能描述在P1P2P3P4P5
导航目录
IRFB3207PBF数据手册
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of 5 Go
若手册格式错乱，请下载阅览PDF原文件
101 North Sepulveda Boulevard, El Segundo, California, 90245, USA Telephone: +1 310 726 8000 www.irf.com
Date: October 15, 2012
PCN Reference: F12-0010-1
Product Reference: Gen 10.2 Power MOSFET (24V, 40V, 55V, 60V, 75V,
100V, D2Pak, D2Pak-7P, DPak, IPak, TO-220, TO-247, TO-262)
To Our Valued Customer:
As always we appreciate your use of International Rectifier semiconductor products. Our
commitment to customer satisfaction and continuous improvement is demonstrated by our
change plans to enhance capacity, quality and reliability. This notice is to inform you of the
following changes.
We would like to express our sincere appreciation for your cooperation regarding the following
changes, and IR will work closely with you to support your requirements during this transition.
Type of Change Notification:
Additional wafer manufacturing site
Description of Change:
Qualify VIS foundry as 2nd source for manufacturing products detailed in the following parts
list.
Reason for the Change:
Additional wafer manufacturing site
Effect Date:
January 15, 2013
International Rectifier will consider this change approved and will implement it by the effective
date unless specific conditions of acceptance or data requests are provided in writing within 30
days of receipt of this notice. Please submit conditions of acceptance and data requests to the
PCN coordinator listed at the end of this notice
Process Change Notification
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