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IRFP140 其他数据使用手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
封装:
TO-247
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P9
标记信息在P9
技术参数、封装参数在P1
电气规格在P2
导航目录
IRFP140数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 5.3mΩ
I
D
= 95A
12/22/03
www.irf.com 1
AUTOMOTIVE MOSFET
PD - 95810
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Description
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Features
HEXFET
®
is a registered trademark of International Rectifier.
* R
θ
is measured at T
J
approximately 90°C
IRFP1405
TO-247AC
S
D
G
Absolute Maximum Ratin
g
s
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited
)
I
DM
P
u
l
se
d
D
ra
i
n
C
urren
t
c
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Volta
g
e V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
T
es
t
e
d
V
a
l
ue
h
I
AR
A
va
l
anc
h
e
C
urren
t
c
A
E
AR
R
epe
titi
ve
A
va
l
anc
h
e
E
ner
gy
g
mJ
T
J
Operatin
g
Junction and
T
STG
Stora
g
e Temperature Ran
g
e°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case * ––– 0.49
R
θcs
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient * ––– 40
1060
530
See Fig.12a, 12b, 15, 16
310
2.0
± 20
Max.
160
110
640
95
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
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