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IRFP140 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
封装:
TO-247
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IRFP140数据手册
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HEXFET
®
Power MOSFET
IRFP140N
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
10/5/98
V
DSS
= 100V
R
DS(on)
= 0.052Ω
I
D
= 33A
S
D
G
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 1.1
R
θCS
Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W
R
θJA
Junction-to-Ambient –––– –––– 40
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 33
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 23 A
I
DM
Pulsed Drain Current 110
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 300 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
TO-247AC
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PD - 91343B
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