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IRLML2803TRPBF
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IRLML2803TRPBF数据手册
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101 N. Sepulveda Blvd., El Segundo, CA 90245 USA Telephone: +1 310 726 8000 www.irf.com
General Announcement
Date: August 19
th
2015
PCR Reference: PCR #561
Product Reference: Package Outline Drawings of IR’s Power MOSFET and IGBT
products
To Our Valued Customers:
We thank you for your use of International Rectifier (IR) semiconductor products. Our commitment to
customer satisfaction and continuous improvement is demonstrated by our change plans to enhance
capacity, quality and reliability. We would like to express our sincere appreciation for your cooperation
regarding the following update.
Type of Change Notification:
The intention of this notification is to clarify the Package Outline Drawing (POD) in data sheets of IR’s
Power MOSFET and IGBT products in various packages.
Description of Change:
IR has been following JEDEC’s guidelines since its inception for specifying the mechanical dimensions of
our packages. The last known major change to some of these PODs was back in 2006 when the entire
industry made changes from Pb-plated to non-Pb-plated (or Lead-free) leads as the result of the
Restriction of Hazardous Substances (RoHS) Directive went into effect.
Since early 2007, IR has made correction to these PODs by incorporating this external web link into every
product data sheet:
For the latest package outline information, customers are encouraged to follow the above web link found
in every Power MOSFET and IGBT product data sheet.
Reason for the Change:
The use of an external POD web link was deemed essential and practical for future data sheet POD
updates.
Effective Date:
Immediately. Previous Effective Date was early 2007
Products Affected:
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRLML2803TRPBF 数据手册

Infineon(英飞凌)
9 页 / 0.24 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
27 页 / 0.31 MByte
Infineon(英飞凌)
2 页 / 0.17 MByte
Infineon(英飞凌)
37 页 / 2.01 MByte
Infineon(英飞凌)
3 页 / 0.14 MByte
Infineon(英飞凌)
1 页 / 0.13 MByte

IRLML2803 数据手册

International Rectifier(国际整流器)
Infineon(英飞凌)
IRF
功率MOSFET ( VDSS = 30V , RDS(ON) =仅为0.25mΩ ) Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
Infineon(英飞凌)
INFINEON  IRLML2803TRPBF  场效应管, MOSFET, N沟道, Micro-3, 30V
International Rectifier(国际整流器)
N沟道,30V,1.2A,250mΩ@10V
Infineon(英飞凌)
N 通道功率 MOSFET 最大 7A,InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
International Rectifier(国际整流器)
IRLML2803TR N沟道MOSFET 1.2A SOT-23/SC-59 marking/标记 1B/B4/BB/BD/B6 低导通电阻
International Rectifier(国际整流器)
International Rectifier(国际整流器)
Infineon(英飞凌)
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