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LSF0108-Q1 其他数据使用手册 - TI（德州仪器）
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汽车类 8 通道双向多电压转换器
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LSF0108-Q1数据手册
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4
LSF0108-Q1
SDLS967B –MAY 2016–REVISED JUNE 2016
www.ti.com
Product Folder Links: LSF0108-Q1
Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and input/output negative-voltage ratings may be exceeded if the input and input/output clamp-current ratings are observed.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature (unless otherwise noted)
(1)
MIN MAX UNIT
V
I
Input voltage
(2)
–0.5 7 V
V
I/O
Input/output voltage
(2)
–0.5 7 V
Continuous channel current 128 mA
I
IK
Input clamp current V
I
< 0 –50 mA
T
J
Max Junction temperature 150 °C
T
stg
Storage temperature –65 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011 ±1000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
I/O
Input/output voltage 0 5 V
V
ref_A/B/EN
Reference voltage 0 5 V
I
PASS
Pass transistor current 64 mA
T
A
Operating free-air temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
LSF0108-Q1
UNITPW (TSSOP)
20 PINS
R
θJA
Junction-to-ambient thermal resistance 106.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 41 °C/W
R
θJB
Junction-to-board thermal resistance 57.6 °C/W
ψ
JT
Junction-to-top characterization parameter 4.2 °C/W
ψ
JB
Junction-to-board characterization parameter 47 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance n/a °C/W
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