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MC14049UBCPG 其他数据使用手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
逻辑芯片
封装:
DIP-16
描述:
六反相缓冲器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
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引脚图在P2Hot
典型应用电路图在P2
原理图在P2
封装尺寸在P4P5P6P7
焊盘布局在P5P6
型号编码规则在P1P2P7
标记信息在P1P7
封装信息在P2
技术参数、封装参数在P1P2
应用领域在P1P2
电气规格在P3
导航目录
MC14049UBCPG数据手册
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© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 10
1 Publication Order Number:
MC14069UB/D
MC14069UB
Hex Inverter
The MC14069UB hex inverter is constructed with MOS P−channel
and N−channel enhancement mode devices in a single monolithic
structure. These inverters find primary use where low power
dissipation and/or high noise immunity is desired. Each of the six
inverters is a single stage to minimize propagation delays.
Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky TTL Load Over the Rated Temperature
Range
• Triple Diode Protection on All Inputs
• Pin−for−Pin Replacement for CD4069UB
• Meets JEDEC UB Specifications
• These Devices are Pb−Free and are RoHS Compliant
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
±10 mA
P
D
Power Dissipation, per Package
(Note 1)
500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v (V
in
or V
out
) v V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
MARKING
DIAGRAMS
1
14
PDIP−14
P SUFFIX
CASE 646
MC14069UBCP
AWLYYWWG
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14
DT SUFFIX
CASE 948G
1
14
14069UG
AWLYWW
14
069U
ALYWG
G
1
14
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
SOEIAJ−14
F SUFFIX
CASE 965
1
14
MC14069UB
ALYWG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
(Note: Microdot may be in either location)
G
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