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MMBFJ201 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
JFET晶体管
封装:
SOT-23-3
描述:
ON Semiconductor MMBFJ201 N通道 JFET 晶体管, Idss: 0.3 → 1.5mA, 3引脚 SOT-23封装
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MMBFJ201数据手册
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若手册格式错乱，请下载阅览PDF原文件
MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ201 / MMBFJ202 Rev. 1.4
January 2015
MMBFJ201 / MMBFJ202
N-Channel General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MMBFJ201 62P SOT-23 3L Tape and Reel
MMBFJ202 62Q SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
V
DG
Drain-Gate Voltage 40 V
V
GS
Gate-Source Voltage -40 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
Description
This device is designed primarily for low level audio
and general-purpose applications with high imped-
ance signal sources. Sourced from process 52.
SOT-23
G
D
S
Note: Source & Drain
are interchangeable
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