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MMBTA06LT1G
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MMBTA06LT1G数据手册
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© Semiconductor Components Industries, LLC, 2010
July, 2010 Rev. 8
1 Publication Order Number:
MMBTA92LT1/D
MMBTA92LT1G,
MMBTA93LT1G
High Voltage Transistors
PNP Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 92 93 Unit
CollectorEmitter Voltage V
CEO
300 200 Vdc
CollectorBase Voltage V
CBO
300 200 Vdc
EmitterBase Voltage V
EBO
5.0 5.0 Vdc
Collector Current — Continuous I
C
500 mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation (Note 2)
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
MMBTA92LT1G SOT23
(PbFree)
SOT23 (TO236AF)
CASE 318
STYLE 6
3000 / Tape & Reel
MARKING
DIAGRAM
2x MG
G
2x = Specific Device Code
M = Date Code*
G = PbFree Package
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBTA92LT3G SOT23
(PbFree)
10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA93LT1G SOT23
(PbFree)
3000 / Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.

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