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MMBTA06LT1 数据手册 - SynSemi
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MMBTA06LT1数据手册
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© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 9
1 Publication Order Number:
MMBTA05LT1/D
MMBTA05L, MMBTA06L
Driver Transistors
NPN Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA05L
MMBTA06L
V
CEO
60
80
Vdc
Collector−Base Voltage
MMBTA05L
MMBTA06L
V
CBO
60
80
Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Electrostatic Discharge ESD HBM Class 3B
MM Class C
CDM Class IV
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5
Board (Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
2
3
1
MARKING DIAGRAMS
1H M G
G
MMBTA05LT1
COLLECTOR
3
1
BASE
2
EMITTER
1GM M G
G
MMBTA06LT1,
SMMBTA06L
http://onsemi.com
1H, 1GM = Specific Device Code
M = Date Code*
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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