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MT46H32M16LFBF-6:B 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
RAM芯片
封装:
BGA
Pictures:
3D模型
符号图
焊盘图
引脚图
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MT46H32M16LFBF-6:B数据手册
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Mobile Low-Power DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 Banks
MT46H16M32LF – 4 Meg x 32 x 4 Banks
Features
•
Vdd/Vddq = 1.70–1.95V
•
1.2V I/O option Vddq = 1.14–1.30V
•
Bidirectional data strobe per byte of data (DQS)
•
Internal, pipelined double data rate (DDR) architec-
ture; two data accesses per clock cycle
•
Differential clock inputs (CK and CK#)
•
Commands entered on each positive CK edge
•
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
•
4 internal banks for concurrent operation
•
Data masks (DM) for masking write data—one mask
per byte
•
Programmable burst lengths (BL): 2, 4, 8, or 16
•
Concurrent auto precharge option is supported
•
Auto refresh and self refresh modes
•
1.8V LVCMOS-compatible inputs
•
On-chip temp sensor to control self refresh rate
•
Partial-array self refresh (PASR)
•
Deep power-down (DPD)
•
Status read register (SRR)
•
Selectable output drive strength (DS)
•
Clock stop capability
•
64ms refresh
Table 1: Key Timing Parameters (CL = 3)
Speed Grade Clock Rate (MHz) Access Time
-5 200 5.0ns
-54 185 5.0ns
-6 166 5.0ns
-75 133 6.0ns
Options Marking
•
Vdd/Vddq
–
1.8V/1.8V H
–
1.8V/1.2V
1
HC
•
Configuration
–
32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16
–
16 Meg x 32 (4 Meg x 32 x 4 banks) 16M32
•
Row-size option
–
JEDEC-standard option LF
–
Reduced page-size option
1
LG
•
Plastic green package
–
60-ball VFBGA (8mm x 9mm)
2
BF
–
90-ball VFBGA (10mm x 13mm)
3
CM
–
90-ball VFBGA (9mm x 13mm)
3
CX
•
Timing – cycle time
–
5ns @ CL = 3 -5
–
5.4ns @ CL = 3 -54
–
6ns @ CL = 3 -6
–
7.5ns @ CL = 3 -75
•
Power
–
Standard Idd2/Idd6 None
–
Low-power Idd2/Idd6
1
L
•
Operating temperature range
–
Commercial (0˚ to +70˚C) None
–
Industrial (–40˚C to +85˚C) IT
•
Design revision :B
Notes:
1. Contact factory for availability.
2. Only available for x16 configuration.
3. Only available for x32 configuration.
512Mb: x16, x32 Mobile LPDDR SDRAM
Features
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf - Rev. H 03/09 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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