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MURS110T3G 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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TVS二极管
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DO-214AA
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MURS110T3G数据手册
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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
www.onsemi.com
4
MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G
Figure 6. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.90.5 1.3
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
1.1
0.3
0.05
0.5
5.0
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.5 2.3
V
R
, REVERSE VOLTAGE (VOLTS)
0 100 300 400
40
80
0.008
0.004
0.8
0.4
0.2
20
4.0
2.0
8.0
T
J
= 175°C
I
R
200 700
Figure 7. Typical Reverse Current*
T
C
, CASE TEMPERATURE (°C)
020
1.0
2.0
3.0
4.0
5.0
I
F(AV)
0
6.0
7.0
8.0
9.0
10
40 60 80 100 120 140 160 180 200
V
R
, REVERSE VOLTAGE (VOLTS)
0128.0
0
5.0
10
25
15
C, CAPACITANCE (pF)
4.0 40
Figure 8. Typical Capacitance
Figure 9. Current Derating, Case
0 0.5
1.0
2.0
3.0
4.0
5.0
0
1.0 1.5 2.0 2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
P
F(AV)
Figure 10. Power Dissipation
0.7
0.07
1.0
7.0
1.7 1.9 2.1
100°C
T
C
= 25°C
175°C
600500
0.08
0.04
0.02
, REVERSE CURRENT ( A)m
T
J
= 100°C
T
J
= 25°C
242016 363228
20
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
R
is sufficiently
below rated V
R
.
RATED VOLTAGE APPLIED
R
q
JC
= 13°C/W
T
J
= 175°C
, AVERAGE POWER DISSIPATION (WATTS)
SQUARE WAVE
DC
, AVERAGE FORWARD CURRENT (AMPS)
T
J
= 175°C
DC
SQUARE WAVE
10
5.0
400
200
(CAPACITANCE LOAD)
I
PK
I
AV
+ 20
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