Datasheet 搜索 > TVS二极管 > ST Microelectronics（意法半导体） > SM6T6V8A 数据手册 > SM6T6V8A 产品手册 1/5 页
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SM6T6V8A 产品手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-214AA
描述:
STMICROELECTRONICS SM6T6V8A TVS二极管, TVS, Transil SM6T系列, 单向, 5.8 V, 13.4 V, DO-214AA, 2 引脚
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SM6T6V8A数据手册
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SM6T6V8A/220A
SM6T6V8CA/220CA
TRANSIL
TM
®
■
PEAK PULSE POWER : 600 W (10/1000µs)
■
BREAKDOWN VOLTAGE RANGE :
From 6.8V to 220 V.
■
UNI AND BIDIRECTIONAL TYPES
■
LOW CLAMPING FACTOR
■
FAST RESPONSE TIME
■
UL RECOGNIZED
FEATURES
SMB
(JEDEC D0-214AA)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation (see note 1) Tj initial = T
amb
600 W
P
Power dissipation on infinite heatsink T
amb =
50°C
5W
I
FSM
Non repetitive surge peak forward
current for unidirectional types
tp = 10ms
Tj initial = T
amb
100 A
T
stg
T
j
Storage temperature range
Maximum junction temperature
-65to+175
150
°C
°C
T
L
Maximum lead temperature for soldering during 10 s.
260 °C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
August 2001- Ed: 5A
Symbol Parameter Value Unit
R
th (j-l)
Junction to leads
20 °C/W
R
th (j-a)
Junction to ambient on printed circuit on recommended pad
layout
100 °C/W
THERMAL RESISTANCES
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