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TA8201AK 其他数据使用手册 - Toshiba(东芝)
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TA8201AK数据手册
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MAY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
Recommended Operating Conditions
Absolute Maximum Ratings for TISP8201M, T
A
= 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, V
GA
=0 V
DRM
120 V
Repetitive peak reverse voltage, V
GK
=70V V
RRM
-120 V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
I
TSP
A
10/1000 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 45
5/310 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs) 70
2/10 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 210
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1, 2 and 3)
I
TSM
A
100 ms
1s
5s
300 s
900 s
11
6.5
3.4
1.4
1.3
Non-repetitive peak gate current, 2/10 µs pulse, cathode commoned (see Note 1) I
GSM
-10 A
Junction temperature T
J
-55 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C
≤ T
J
≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions.
2. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
Above 85 °C, derate linearly to zero at 150 °C lead temperature.
3. These non-repetitive rated terminal currents are for the TISP8200M and TISP8201M together. Device (A) terminal positive current
values are conducted by the TISP8201M and (K) terminal negative current values by the TISP8200M.
See Figure 10 Min Typ Max Unit
C1, C2 Gate decoupling capacitor 100 220 nF
R1, R2
Series resistance for Telcordia GR-1089-CORE first-level and second-level surge survival
Series resistance for ITU-T K.20, K.21 and K.45 coordination with a 400 V primary protector
15
10
20
20
Ω
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