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MT46H32M16LFBF-6 IT:B TR 产品设计参考手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
RAM芯片
封装:
VFBGA-60
Pictures:
3D模型
符号图
焊盘图
引脚图
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MT46H32M16LFBF-6 IT:B TR数据手册
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若手册格式错乱，请下载阅览PDF原文件
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
Summary
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194 Micron Technology, Inc., reserves the right to change products or specifications without notice.
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
6 ©2007 Micron Technology, Inc. All rights reserved.
Summary
Micron periodically offers product performance improvements through process node
migration. This is the case with the product transition from 95nm to 78nm. Designers
should consult product data sheets for detailed information on product differences
before proceeding with product transitions.
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