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2N7002-7-G 开发手册 - Diodes（美台）
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2N7002-7-G数据手册
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2N7002
Document number: DS11303 Rev. 33 - 2
3 of 5
www.diodes.com
July 2013
© Diodes Incorporated
2N7002
0
0.2
0.4
0.6
0.8
1.0
01 2
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
V = 10V,
I = 200mA
GS
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
024681012141618
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
2
1
4
3
00.2
0.4
0.6 0.8
1
V
G
A
T
E S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
GS,
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
0
50
100
150
200
250
300
350
025
50 75
100
125 150 175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
°
400
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