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2N7002-7-F 数据手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
MOS管
封装:
SOT-23-3
描述:
2N7002-7-F 编带
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2N7002-7-F数据手册
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1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
1.3 Applications
Logic level translators High-speed line drivers
1.4 Quick reference data
2. Pinning information
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011 Product data sheet
SOT23
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150°C --60V
I
D
drain current V
GS
=10V; T
sp
=25°C; see Figure 1;
see Figure 3
- - 300 mA
P
tot
total power dissipation T
sp
=25°C; see Figure 2 --0.83W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=500mA; T
j
=25°C;
see Figure 6; see Figure 8
-2.85Ω
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
S
D
G
mbb076
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