Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRLML2803TRPBF 数据手册 > IRLML2803TRPBF 开发手册 1/9 页
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IRLML2803TRPBF 开发手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOT-23-3
描述:
N沟道,30V,1.2A,250mΩ@10V
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IRLML2803TRPBF数据手册
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IRLML2803
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
V
DSS
= 30V
R
DS(on)
= 0.25Ω
HEXFET
®
Power MOSFET
Description
4/28/03
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
S
D
G
Micro3
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 1.2
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 0.93 A
I
DM
Pulsed Drain Current 7.3
P
D
@T
A
= 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 230
Thermal Resistance
°C/W
PD - 91258D
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