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IRLML2803TRPBF
器件3D模型
0.385
导航目录
  • 封装尺寸在P7
  • 标记信息在P7
  • 封装信息在P1
  • 技术参数、封装参数在P1
  • 电气规格在P2
IRLML2803TRPBF数据手册
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Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with
the industry's smallest footprint. This package, dubbed the
Micro3, is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
V
DSS
= 30V
R
DS(on)
= 0.25Ω
HEXFET
®
Power MOSFET
Description
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
Linear Derating Factor
mW/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy
g
mJ
dv/dt
Peak diode Recovery dv/dt
d
V/ns
T
J ,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Maximum Junction-to-Ambient
f
–––
230
°C/W
3.9
A
5.0
540
4.3
±20
Max.
1.2
0.93
7.3
-55 to + 150
D
S
G
3
1
2
Micro3
IRLML2803PbF
Form Quantity
IRLML2803TRPbF Micro3
(SOT-23) Tape and Reel 3000 IRLML2803TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014

IRLML2803TRPBF 数据手册

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IRLML2803 数据手册

International Rectifier(国际整流器)
Infineon(英飞凌)
IRF
功率MOSFET ( VDSS = 30V , RDS(ON) =仅为0.25mΩ ) Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
Infineon(英飞凌)
INFINEON  IRLML2803TRPBF  场效应管, MOSFET, N沟道, Micro-3, 30V
International Rectifier(国际整流器)
N沟道,30V,1.2A,250mΩ@10V
Infineon(英飞凌)
N 通道功率 MOSFET 最大 7A,InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
International Rectifier(国际整流器)
IRLML2803TR N沟道MOSFET 1.2A SOT-23/SC-59 marking/标记 1B/B4/BB/BD/B6 低导通电阻
International Rectifier(国际整流器)
International Rectifier(国际整流器)
Infineon(英飞凌)
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