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2N4392 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
JFET晶体管
封装:
TO-206
描述:
N沟道JFET的 N-Channel JFETs
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2N4392数据手册
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2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) –40 V. . . . . . . . . . . . . . . . . . .
(SST Prefix) –35 V. . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) –65 to 200 _C. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix) –55 to 200 _C. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .
Power Dissipation : (2N Prefix)
a
(T
C
= 25_C) 1800 mW. . . . . . . . . .
(PN/SST Prefixes)
b
350 mW. . . . . . . . . . . . . . .
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–55 –40 –40 –40
Gate-Source
V
DS
= 20 V 2N/PN: I
D
= 1 nA
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V SST: I
D
= 10 nA
–4 –10 –2 –5 –0.5 –3
2N 50 150 25 75 5 30
Saturation Drain
Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V
PN 50 150 25 100 5 60
mA
Current
b
DSS DS GS
SST 50 25 5
V
GS
= –20 V
2N/SST –5 –100 –100 –100
V
GS
= –20 V
V
DS
= 0 V
PN –5 –1000 –1000 –1000
pA
Gate Reverse Current I
GSS
2N: T
A
= 150_C
–13 –200 –200 –200
GSS
PN: T
A
= 100_C
–1 –200 –200 –200
nA
SST: T
A
= 125_C
–3
Gate Operating Current I
G
V
DG
= 15 V, I
D
= 10 mA –5
2N: V
GS
= –5 V 5 100
2N: V
GS
= –7 V 5 100
pA
2N: V
GS
= –12 V 5 100
V
DS
= 20 V
PN: V
GS
= –5 V 0.005 1
PN: V
GS
= –7 V 0.005 1
nA
PN: V
GS
= –12 V 0.005 1
SST V
DS
= 10 V, V
GS
= –10 V 5 100 100 100 pA
Drain Cutoff Current I
D(off) 2N: V
GS
= –5 V 13 200
V
DS
= 20 V
T = 150_C
2N: V
GS
= –7 V 13 200
T
A
= 150
_
C
2N: V
GS
= –12 V 13 200
PN: V
GS
= –5 V 1 200
nA
V
DS
= 20 V
T = 100_C
PN: V
GS
= –7 V 1 200
nA
T
A
= 100
_
C
PN: V
GS
= –12 V 1 200
V
DS
= 10 V
T
A
= 125_C
SST: V
GS
= –10 V 3
I
D
= 3 mA 0.25 0.4
Drain-Source
On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 6 mA 0.3 0.4
V
On-Voltage
DS(on) GS
I
D
= 12 mA 0.35 0.4
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 30 60 100
Gate-Source I
G
= 1 mA
2N 0.7 1 1 1
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA
V
DS
= 0 V
PN/SST 0.7
V
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