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2N4392 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
JFET晶体管
封装:
TO-206
描述:
N沟道JFET的 N-Channel JFETs
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2N4392数据手册
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of 7 Go
若手册格式错乱，请下载阅览PDF原文件
2N/PN/SST4391 Series
Vishay Siliconix
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
10
1
10 100 1 k 100 k10 k
V
DS
= 10 V
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
0
0
–2 –10
500
200
0
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
Gate Leakage Current
030
T
A
= 125_C
T
A
= 25_C
Common-Gate Input Admittance
100
10
1
0.1
100 1000200 500
(mS)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
Common-Gate Forward Admittance Common-Gate Reverse Admittance
100
10
1
0.1
100 1000200 500
(mS)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
10
1.0
0.1
0.01
100 1000200 500
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
(mS)
V
DG
– Drain-Gate Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)f – Frequency (Hz)
f – Frequency (MHz)
f – Frequency (MHz) f – Frequency (MHz)
40
30
20
10
–4 –6 –8
I
GSS
@ 125_C
6 121824
400
200
100
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
I
D
= 1 mA
I
D
= 10 mA
g
fs
g
os
1 mA
I
GSS
@ 25_C
I
D
= 10 mA
g
ig
b
ig
–g
fg
b
fg
g
fg
–g
rg
–b
rg
+g
rg
10 mA
I
G(on)
@ I
D
1 mA
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
g
fs
– Forward Transconductance (mS)
I
G
– Gate Leakage)
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