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2N4392 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
JFET晶体管
封装:
TO-206
描述:
N沟道JFET的 N-Channel JFETs
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2N4392数据手册
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2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0 –10
0
200
160
0
r
DS
I
DSS
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 20 V, V
GS
= 0 V
100
0
1 10 100
On-Resistance vs. Temperature
200
–55 25 125
0
–15 85
I
D
= 1 mA
r
DS
changes X 0.7%/_C
Turn-On Switching
5
0 –10
4
3
2
1
0
Switching Time (ns)
t
d(on)
@
I
D
= 3 mA
t
d(on)
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50 W
V
GS(L
)
= –10 V
Turn-Off Switching
30
010
24
18
12
6
0
V
GS(off)
= –2 V
V
GS(off)
= –8 V
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
= –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
Capacitance (pF)
f = 1 MHz
V
DS
= 0 V
0
V
GS(off)
– Gate-Source Cutoff Voltage (V)
T
A
– Temperature (_C)
V
GS
– Gate-Source Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2 –4 –6 –8
–35
120
80
40
5 45 65 105 –2 –4 –6 –8
2468 –4 –8 –12 –16
Switching Time (ns)
V
GS(off)
= –2 V
–4 V
–8 V
T
A
= 25_C
t
r
V
GS(off)
= –2 V
–4 V
–8 V
t
d(off)
C
iss
C
rss
t
f
r
DS(on)
– Drain-Source On-Resistance ( Ω )
r
DS(on)
– Drain-Source On-Resistance ( Ω )
r
DS(on)
– Drain-Source On-Resistance ( Ω )
I
DSS
– Saturation Drain Current (mA)
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